Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Blog Article

Layered transition metal dichalcogenides (TMDs) provide a favorable research platform for the advancement of spintronics and valleytronics because of their unique spin-valley coupling effect, which is attributed to the absence of inversion symmetry coupled with the presence of time-reversal symmetry.To maneuver the valley pseudospin efficiently is of great importance for the fabrication of conceptual devices in microelectronics.Here, we propose a straightforward way to modulate valley pseudospin with interface engineering.An underlying T-Shirts negative correlation between the quantum yield of photoluminescence and the degree of valley polarization was discovered.

Enhanced luminous intensities were observed in the MoS2/hBN heterostructure but with a low value of valley polarization, which was in stark contrast to those observed in the MoS2/SiO2 heterostructure.Based on the steady-state and Pen Holder time-resolved optical measurements, we reveal the correlation between exciton lifetime, luminous efficiency, and valley polarization.Our results emphasize the significance of interface engineering for tailoring valley pseudospin in two-dimensional systems and probably advance the progression of the conceptual devices based on TMDs in spintronics and valleytronics.